Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films
نویسندگان
چکیده
منابع مشابه
Comparative Studies on Ultraviolet-Light-Derived Photoresponse Properties of ZnO, AZO, and GZO Transparent Semiconductor Thin Films
ZnO, Al-doped ZnO (AZO), and Ga-doped ZnO (GZO) semiconductor thin films were deposited on glass substrates via a sol-gel spin-coating process for application in a photoconductive ultraviolet (UV) detector. The doping concentrations of Al and Ga were 1.0 at % in the precursor solutions. In this study, the microstructural features and the optical and electrical properties of sol-gel-derived ZnO,...
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RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The electric conduction mechanism of the AZO and GZO films came mainly from the Al and Ga, the oxygen vacancies, Zn interstitial atoms, and Al and/or Ga interstitial atoms. AZO and GZO films achieved higher conduction than...
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چکیده ندارد.
15 صفحه اولComparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films
We have investigated the influences of aluminum and gallium dopants (0 to 2.0 mol%) on zinc oxide (ZnO) thin films regarding crystallization and electrical and optical properties for application in transparent conducting oxide devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates (corning 1737) by sol-gel spin-coating process. As a starting material, AlCl3⋅6H2O, Ga(NO3)2, ...
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Transparent Nd-doped ZnO films with thickness in the range of 70 to 250 nm were grown by pulsed-laser deposition (PLD) on c-cut sapphire substrates at various oxygen pressures and substrate temperatures. A wide range of optical and electrical properties of the films were obtained and correlated to the composition and crystalline structure. The Nd-doped ZnO films are smooth, dense, and display t...
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ژورنال
عنوان ژورنال: Materials
سال: 2017
ISSN: 1996-1944
DOI: 10.3390/ma10121379